Infineon IRLML6246TRPBF N-Channel MOSFET: Key Features and Applications

The Infineon IRLML6246TRPBF is a highly efficient N-Channel MOSFET utilizing advanced TrenchFET® technology, designed to deliver superior performance in a compact package. This MOSFET is engineered for power management applications where space, efficiency, and thermal performance are critical. Its key attributes make it a preferred choice for designers seeking reliability and high switching speeds in modern electronic circuits.

One of the most notable features of the IRLML6246TRPBF is its exceptionally low on-state resistance (RDS(on)) of just 0.045 Ω at a 4.5 V gate drive. This low resistance minimizes conduction losses, leading to higher efficiency and reduced heat generation. The device operates with a low gate charge (Qg) and offers fast switching characteristics, making it ideal for high-frequency applications. Additionally, it is housed in a compact SOT-23 package, which saves valuable board space while providing robust thermal and electrical performance. With a drain-source voltage (VDS) of 20 V and a continuous drain current (ID) of 6.3 A, it balances power handling and efficiency effectively.

The applications of the IRLML6246TRPBF are diverse, spanning across multiple industries. It is commonly used in load switching circuits, power management modules, and DC-DC converters in portable devices such as smartphones, tablets, and laptops. Its fast switching capability also makes it suitable for motor control applications in consumer electronics and small industrial systems. Furthermore, it is employed in battery protection circuits and power distribution switches, where its low RDS(on) ensures minimal voltage drop and power loss.

ICGOOODFIND:

The Infineon IRLML6246TRPBF stands out for its combination of low on-resistance, fast switching speed, and compact form factor. It is an excellent solution for power management in space-constrained and efficiency-driven applications, providing designers with a reliable and high-performance component.

Keywords:

N-Channel MOSFET, TrenchFET Technology, Low RDS(on), Power Management, Fast Switching