Infineon SPW32N50C3FKSA1: 650V CoolMOS™ Power Transistor for High-Efficiency Applications

The continuous evolution of power electronics demands components that deliver superior performance, reliability, and efficiency. Addressing these needs, the Infineon SPW32N50C3FKSA1 stands out as a high-voltage CoolMOS™ power transistor engineered to excel in demanding applications. With a 650V voltage rating and advanced superjunction technology, this MOSFET is designed to minimize switching losses and maximize power density, making it an ideal choice for modern high-efficiency systems.

A key strength of the SPW32N50C3FKSA1 lies in its ultra-low effective output capacitance (Coss,eff) and exceptional switching characteristics. These attributes significantly reduce switching losses, especially in hard-switching topologies like power factor correction (PFC) circuits, server and telecom SMPS, and industrial motor drives. The reduced energy stored in the output capacitance not only enhances efficiency but also allows for higher switching frequencies. This, in turn, enables the design of more compact power supplies with smaller magnetic components and filters, directly contributing to increased power density.

The transistor is built on Infineon’s proven CoolMOS™ technology platform, which offers an excellent figure-of-merit (RDS(on) x Area). With a maximum drain-source on-state resistance (RDS(on)) of just 32 mΩ, it ensures minimal conduction losses. This low resistance is crucial for improving the full-load efficiency of a power supply and managing thermal performance, ultimately leading to higher reliability and potentially reducing the need for complex cooling solutions.

Furthermore, the device boasts robustness and reliability, featuring a high avalanche ruggedness and an integrated source-drain diode with good reverse recovery characteristics. Its TO-247 package ensures effective mechanical stability and thermal performance, facilitating efficient heat dissipation away from the silicon die.

ICGOOODFIND: The Infineon SPW32N50C3FKSA1 is a benchmark 650V CoolMOS™ power transistor that sets a new standard for efficiency and power density. Its combination of ultra-low switching losses, low RDS(on), and high robustness makes it a superior component for designers aiming to push the boundaries of performance in next-generation SMPS, PFC stages, and industrial power systems.

Keywords:

CoolMOS™

650V

Switching Losses

Power Density

RDS(on)