**ADRF5019BCPZN-R7: A High-Performance Silicon SPDT Reflective Switch for RF and Microwave Applications**

The **ADRF5019BCPZN-R7** is a state-of-the-art **silicon, single-pole double-throw (SPDT) reflective switch** designed to meet the demanding requirements of modern RF and microwave systems. Operating seamlessly from 100 MHz to an impressive **44 GHz**, this component is engineered for a broad spectrum of applications, including **5G infrastructure, test and measurement equipment, aerospace, and defense systems**.

A key strength of the ADRF5019BCPZN-R7 lies in its exceptional **high isolation and low insertion loss**. It typically provides greater than 50 dB of isolation at 10 GHz and an insertion loss of just 0.8 dB, ensuring minimal signal degradation and superior channel-to-channel separation. This performance is critical in preserving signal integrity in both transmit and receive paths. The switch handles up to **38 dBm of input power**, making it robust enough for high-power applications. Furthermore, it features an integrated driver, which simplifies design by eliminating the need for external negative voltage generators and requiring only a single positive supply voltage of +3.3 V/+5 V for control.

Housed in a compact, **24-lead, 4 mm × 4 mm LFCSP package**, the device is optimized for high-density PCB layouts. Its reflective design allows it to effectively terminate off-path ports to 50 ohms, enhancing system performance. With a fast switching speed of 30 ns, the ADRF5019BCPZN-R7 is an ideal solution for systems requiring rapid signal routing and high reliability.

**ICGOOODFIND**: The ADRF5019BCPZN-R7 stands out as a superior integrated solution, offering wide bandwidth, high power handling, and excellent RF performance in a miniature form factor, significantly simplifying next-generation RF design challenges.

**Keywords**: RF Switch, High Isolation, Broadband, SPDT, Microwave Applications.