Infineon IPW60R031CFD7 CoolMOS™ CFD7 600V Power MOSFET for High-Efficiency Switching Applications

Release date:2025-10-29 Number of clicks:61

Infineon IPW60R031CFD7 CoolMOS™ CFD7 600V Power MOSFET for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching devices. Infineon Technologies addresses these challenges head-on with the IPW60R031CFD7, a 600V Power MOSFET from the revolutionary CoolMOS™ CFD7 family. This device is engineered to set new benchmarks in performance for a wide range of high-efficiency switching applications, including server and telecom SMPS, industrial power supplies, solar inverters, and EV charging stations.

A defining feature of the CFD7 technology is its superior switching performance. The IPW60R031CFD7 boasts an exceptionally low figure-of-merit (FoM), characterized by an ultra-low on-state resistance (R DS(on)) of just 31 mΩ combined with drastically reduced gate charge (Q G) and output charge (Q oss). This optimal balance minimizes both conduction and switching losses. The result is significantly higher efficiency, especially in hard-switching topologies like PFC boost stages and two-switch forward converters, enabling designers to achieve higher power densities and operate at higher switching frequencies without sacrificing thermal performance.

Beyond raw efficiency, the CoolMOS™ CFD7 series integrates a fast and robust body diode. This feature is critical for applications requiring high diode ruggedness and low reverse recovery charge (Q rr), such as in totem-pole PFC circuits. The integrated diode eliminates the need for an external anti-parallel diode, simplifying design, reducing component count, and enhancing overall system reliability.

Furthermore, the device offers excellent ease of use and design flexibility. Its low gate charge simplifies drive circuit design and reduces the stress on the gate driver IC. The high avalanche ruggedness and strong immunity against gate voltage oscillations ensure stable and reliable operation even in demanding environments. The TO-247 package provides a familiar and robust form factor with excellent thermal characteristics, allowing for effective heat dissipation.

ICGOOODFIND: The Infineon IPW60R031CFD7 CoolMOS™ CFD7 represents a significant leap in high-voltage power switching technology. It is a top-tier choice for engineers focused on maximizing efficiency, increasing power density, and enhancing system reliability in next-generation power conversion systems. Its blend of ultra-low losses, a robust body diode, and driver-friendly characteristics makes it an exceptional component for pushing the boundaries of performance.

Keywords: High-Efficiency Switching, CoolMOS™ CFD7, Ultra-Low R DS(on), Fast Body Diode, Power Density.

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