Infineon AIKQ120N60CT: 1200V 60A SiC Trench MOSFET for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency, greater power density, and improved thermal performance in power electronics is driving the widespread adoption of Wide Bandgap (WBG) semiconductors. Among these, Silicon Carbide (SiC) MOSFETs have emerged as a cornerstone technology for next-generation power conversion systems. The Infineon AIKQ120N60CT stands out as a prime example, engineered to meet the demanding requirements of modern high-power applications.

This device is a 1200V, 60A SiC trench MOSFET built on Infineon's advanced .XT interconnect technology and proprietary Trench semiconductor structure. The combination of these technologies yields a component with an exceptionally low specific on-resistance (R DS(on)) of just 19 mΩ. This fundamental characteristic is the key to minimizing conduction losses, which directly translates into higher efficiency, especially under high-load conditions.

The benefits of the AIKQ120N60CT extend far beyond low conduction losses. The SiC material itself offers superior properties compared to traditional silicon. It enables significantly higher switching frequencies due to minimal switching losses and the absence of a reverse recovery charge in the body diode. This allows designers to shrink the size of passive components like inductors and capacitors, leading to a substantial increase in overall power density. Systems can be made smaller, lighter, and more cost-effective without sacrificing performance.

Furthermore, the high thermal conductivity of SiC permits more efficient heat dissipation from the junction. Coupled with a high maximum operating junction temperature (Tj max of 175°C), this MOSFET ensures robust performance and enhanced reliability even in harsh operating environments. This makes it an ideal candidate for a wide array of demanding applications, including:

Solar inverters and energy storage systems (ESS)

Electric vehicle (EV) charging infrastructure and onboard chargers (OBC)

Industrial motor drives and SMPS

Uninterruptible Power Supplies (UPS)

The AIKQ120N60CT is offered in an TO-247 3-pin package, ensuring mechanical robustness and facilitating a straightforward design-in process for engineers familiar with the industry-standard housing.

ICGOODFIND: The Infineon AIKQ120N60CT is a high-performance SiC MOSFET that sets a new benchmark for efficiency and power density. Its ultra-low on-resistance, fast switching capabilities, and high-temperature operation make it a superior choice for engineers designing cutting-edge power conversion systems aimed at reducing energy loss and system size.

Keywords: SiC MOSFET, High-Efficiency, Power Density, Fast Switching, Wide Bandgap