**HMC1165LP5E: A 5 W Ka-Band Power Amplifier for Advanced Microwave Systems**

The relentless drive for higher data rates and more sophisticated sensing capabilities in modern electronics is pushing operational frequencies into the Ka-Band (26.5 – 40 GHz). This spectrum offers wider bandwidths essential for high-speed communication, 5G backhaul, and advanced radar systems. However, generating significant power at these frequencies presents a substantial engineering challenge. The **HMC1165LP5E from Analog Devices Inc. emerges as a critical solution**, a monolithic microwave integrated circuit (MMIC) power amplifier that delivers exceptional performance in a compact form factor.

At its core, the HMC1165LP5E is designed to **deliver 5 W of saturated output power (P SAT)** across a broad frequency range from 27 to 31 GHz. This high power level is paramount for overcoming path loss and ensuring robust link budgets in point-to-point radio links and satellite communication (SATCOM) terminals. The amplifier achieves a typical small-signal gain of 22 dB, which significantly reduces the demand on the driver stages preceding it, thereby simplifying overall system design. Furthermore, it maintains excellent power-added efficiency (PAE), typically 25%, which is crucial for managing thermal dissipation and power consumption in densely packed electronic assemblies.

A key feature of this amplifier is its **high linearity and excellent gain flatness** across its operational band. This performance is vital for complex modulation schemes like 256-QAM or 1024-QAM used in modern data links, where amplitude and phase fidelity are necessary to maintain low bit error rates (BER). The device is also internally matched to 50 Ohms, which drastically simplifies integration into microwave circuits, reducing the need for extensive external matching components.

The HMC1165LP5E is housed in a **5 mm x 5 mm, leadless, surface-mount package (LP5)**. This small footprint is indispensable for next-generation systems where real estate on the printed circuit board (PCB) is extremely limited. Despite its small size, the package is engineered for effective heat dissipation, allowing the die to handle the thermal stress associated with high RF output power. The device incorporates on-chip bias control and is designed for a single positive supply voltage, simplifying the power supply architecture.

Typical applications that benefit from its capabilities include:

* **Millimeter-wave 5G infrastructure** and base stations.

* **SATCOM uplink terminals** and very-small-aperture terminals (VSATs).

* **Military and aerospace radar and electronic warfare (EW) systems**.

* **Test and measurement equipment** requiring a reliable power source.

**ICGOOODFIND**

The HMC1165LP5E stands out as a high-performance, industry-leading Ka-Band power amplifier. It successfully balances the critical triumvirate of **high output power, high efficiency, and broad bandwidth** within a miniaturized package. Its comprehensive internal matching and robust design make it an indispensable component for engineers developing cutting-edge microwave systems that demand reliability and performance at the edge of frequency technology.

**Keywords:** Ka-Band Power Amplifier, High Output Power, Monolithic Microwave Integrated Circuit (MMIC), SATCOM, 5G Infrastructure.